Essential Basics of Reactive Sputtering

Sputtering physical vapor (PVD) deposition, a thin film coatings production methods is a standard technique. Basic sputtering net which the material is a desired goal, and an inert gas, usually argon uses. If the material is a pure chemical elements, atoms, just as the goal and submit the form to come. But it is also possible as oxygen or nitrogen in place of, or use either a non-inert gas (usually) inert gas (argon) apart. When this is done, ionized non-target materials inert gas chemically reacts with the vapor cloud is a molecular complex can produce the film deposited. For example, a silicon oxide target reactively sputtered silicon film with oxygen gas, nitrogen gas or produced with a silicon nitride film can produce.

However, it is also possible as oxygen or nitrogen in place of, or use either a non-inert gas (usually) inert gas (argon) apart. When this is done, ionized non-target materials inert gas chemical reaction with vapor cloud is a molecular complex can produce the film deposited. For example, a silicon oxide target reactively sputtered silicon film with oxygen gas, nitrogen gas or produced with a silicon nitride film can produce.

There are many variables in the process are addressed. An important consideration is the distribution of cells within the reactive gas. The inert gas atoms can be used again - ionized, ineffective, and again in plasma ionized - chemically reactive gas is consumed as the desired product mix. A frequent response to produce the film, it is often necessary to the gas surrounding the cathode through the plasma fairly evenly injecting includes some specific physical resources.

It means to a typical "gas ring" around the cathode. With a tube or channel with small hole location will be part of the plasma gas at intervals along the perimeter of the target allowed to bleed each. Since the reactive gas to ionize and get a quick goal by the electric field, it does sputter target material as the inert gas does not.

In fact, it is possible to use only the reactive gas, and some users that like to run the process - 100% reactive gas, an argon. But it is more common passive and reactive use a combination of gas and reactive gas partial pressure is a variable that produced the film stoichiometry and molecular characteristics of influence.

It is also possible for those without some chemical reactive gas ions sputtering targets them away from the target surface atoms to react with. This is a pure original content of a plate that already contains a percentage of reacted molecules is changing - it's the "poison" is referred to as the target surface. And the molecules behave differently in terms of conductivity, sputter yield, and so forth will.

For this reason, the sputtering time to time by the top layer off the surface needed to reconstruct the original content just to disable the withdrawal can be done with gas. Suitable conductive material is the original target, sputtering DC is possible, using a pulsed DC power supply can help the regeneration step, which otherwise is an interruption of normal processing to reduce the need.

Standard molecular films (inactive) molecular materials can be produced by sputtering targets. For example, silicon oxide or silicon nitride, the previously mentioned materials made of molecular targets can be sputtered argon. But ions with enough energy to sputter atoms off a target off the whole surface in parts of those molecules are able to share. For this reason, even if the basic process of reactive sputtering is not, it still contains some amount of background reactive gas to restore stoichiometry for these dissociated pieces can be useful.


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